| 摘要 |
PURPOSE:To restrain the absorption into the inside of a crystal, and obtain an excellent LED for blue light, by forming, on a ZnSe substrate crystal, a ZnSSeTe layer whose forbidden bandwidth is narrower than that of the ZnSe crystal, and forming a generation junction. CONSTITUTION:The title semiconductor light emitting element comprises the following stacked in order on the ZnSe single crystal substrate 11; a first conductivity type ZnSxSe1-x-yTey(0<x<1,0<y<1) crystal layer 12 and a second conductivity type ZnSex'Se1-x'-y'Tey(0<x'<1, 0<y'<1) crystal layer 13. The forbidden bandwidth of the first conductivity type ZnSSeTe crystal layer 12 is made narrower than that of the ZnSe single crystal substrate 11. Therefore light absorption into the substrate inside can be reduced. Further, as for the mixed crystal composition of P-N junction, the forbidden bandwidth of P-type is made larger than that of N-type by changing the values of x, y and x', y'. Therefore, the internal absorption of a surface layer can be restrained to the utmost. Thereby, a blue-light emitting element having excellent characteristics and high luminous efficiency can be obtained. |
