| 摘要 |
PURPOSE:To form multilayer wiring excellently by a method wherein a material having excellent characteristics at a high temperature and flatness is employed, a via-hole is shaped through development and minute working is enabled, and said material is utilized as an interlayer insulating film. CONSTITUTION:The first layer wiring 2 is shaped onto a silicon substrate 1, the surface thereof is coated with silicon dioxide, and a resin layer 6 in organosiloxane resin, etc. is applied. The resin has excellent characteristics at a high temperature, flatness and insulating property, and is utilized as a negative resist. When electron beams are irradiated to the resin layer through a mask, a section not irradiated is removed, and the via-hole 5 is shaped. When heating the surface at 450 deg.C, said resin is cured, Al is evaporated on the cured insulaying layer 6, and the second layer wiring 7 contacting with the wiring 2 is formed in the via-hole while using a photo-resist patterned as a mask. |
