| 摘要 |
PURPOSE:To simplify the manufacturing processes by forming a mask layer on a part other than a desired region, forming a semiconductor layer on the desired region and the mask layer, lifting off the mask layer, and leaving the semiconductor layer on the desired region. CONSTITUTION:An SiO2 film 2 is grown on an Si substrate 1, and a base region 3 is formed in accordance with a manufacturing technology of a bipolar integrated circuit. In the SiO2 film 2, an emitter region forming well E, a base electrode well B, a Schottky barrier diode forming well SBD are formed. Then a photoresist layer 4 is applied on a substrate 1. Patterning is performed on said layer 4 so as to provide the wells only in the emitter region and other required regions. Polysilicon is applied on the entire surface to the thickness of about 500Angstrom . Ions are implanted in the direction of arrows, and an emitter region 6 is formed in a base region 3. A polysilicon layer 5' is removed by the lifting off. Then the implanted ions are activated. Finally aluminum is deposited, patterninig is performed, and electrodes 7, 8 and 9 for the emitter, the base, and the Schottky barrier are formed. |
