| 摘要 |
PURPOSE:To form the characteristics of a resistance element with high accuracy in the semiconductor device using one part of wiring consisting of a semiconductor such as Si, to which impurities are doped, as the resistance element. CONSTITUTION:An unevenness functioning as nuclei for artificial crystal growth is formed in a region 13a in which is resistor of an oxide film 13b on a semiconductor substrate in Si, etc. must be shaped, and a non-single crystal Si film in polycrystal silicon, etc. serving as wiring connected to a diffusion region 12, etc. is formed on the unevenness. When impurities are each diffused in regions functioning as an electrode 15''c and wiring 15''b among the Si film in high concentration and in a region serving as the resistor 15''a in low concentration and energy rays having high density such as laser rays are irradiated to the region functioning as the resistor and the region is changed into a single crystal, there is no crystal grain boundary in the single crystal resistor, and diffusion velocity is also slow. Consequently, the resistor can be formed with high accuracy. |
