| 摘要 |
PURPOSE:To obtain a bipolar semiconductor device having superior performance and high integration by a method wherein a film containing an emitter diffusion source is formed selectively on a substrate, the upper face and the circumference of an insulating film covering the film thereof are etched by ions form openings base connecting layers are formed by ion implantation, and electrodes ae adhered. CONSTITUTION:An N type epitaxial layer 23 on the P type substrate 21 having an N<+> type buried layer 22 is isolated by SiO2 layers 24, an N<+> type lead out layer 25 to be connected to the layer 22 is provided, the N<+> type polycrystalline Si film 26 is arranged selectively on the island region and is convered with the SiO2 film 27. Ions A generated by glow discharge in CF4+H2 gas are irradiated thereon to perform etching vertically and the base connecting openings 28 are formed thereby. B ions are implanted to form a P type base active layer 29, the same type connecting layer 29', and it is treated in N2 gas at 1,000 deg.C to perform annealing and at the same time to form an N<+> type emitter layer 30 by diffusion. After then, the surface of substrate is etched and the Al electrodes 31 are adhered. By this constitution, the P<+> type base connecting layers 29' are enabled to approach to the N<+> type emitter layer 30 up to the limit of capacity and withstand voltage between emitter and base, base resistance is also reduced, and high integration can be attained.
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