| 摘要 |
PURPOSE:To contrive to enhance sharply sensitivity of an output circuit of a charge transfer device by a method wherein a floating diffusion layer is so provided in a substrate as both the end sides thereof are separated from the end parts of an output barrier electrode and a reset electrode. CONSTITUTION:The maximum potential level 102 is formed in a buried channel layer 40 when the prescribed bias voltage is applied to the output barrier electrode 35. And the maximum potential level 103 is formed in the buried channel layer 40 at the lower part of the reset electrode 36 in the closed condition of the electrode 36. The inclination of potentials 104, 105 show the inclination of potentials at the parts of the buried channel region between the floating diffusion layer 42 and the electrodes 35, 36. By making both the end parts of the diffusion layer 42 wherein signal charge is to be stored to be separated at the prescribed distances from the end parts of the electrodes 35, 36, MOS type electrostatic capacitaneces COG, CRS between those parts can be reduced remarkably. |
