| 摘要 |
PURPOSE:To obtain a gate electrode of semiconductor device being reinforced dynamically by a method wherein the gate electrode is made as the side part thereof to lean against the first region being enabled to constitute the source and drain. CONSTITUTION:A field insulator 2 is buried in the surface of an Si single crystal substrate by the selective oxidation method, and the first region 3 is formed on the surface thereof with an Si semiconductor being doped with an N<+> type impurity by depressurized vapor phase growth. An insulating region 4 is provided on the side circumference and on the upper side of the region 3. The triangular gate electrode 6 being consisted of the first and the second layers consisted of at least two conductors or semiconductors is provided at the corner part between the region 4 and the substrate 1, and the second two regions 13 are provided beneath the electrode 6 and one ends of two electrodes separately from the region 3. |
