| 摘要 |
PURPOSE:To obtain an IC capable of performing a logic function by securing the shape of a polycrystalline Si layer pattern forming a gate and adding a wiring pattern and a through hole pattern thereto. CONSTITUTION:A polycrystalline Si layer pattern forming the gate of a transistor (TR) is connected with a metallic wire or a polycrystalline Si wire 31, e.g. via a through hole 41, and a diffused layer pattern is connected with metallic wires 32, 33 via through holes 42, 43 to form a TR. Two TRs are added with through holes 44-47, metallic wire or polycrystalline Si wires 34, 35 and metallic wires 33, 36, 37, and an output signal is led from a diffused layer pattern with the through hole 48 and the wire 38. Further, 3-input NAND gate can be performed by connecting the diffused layer pattern to the low potential power wire with the through hole 49 and the wire 39. |
