Semiconductor component and method of producing it

摘要

Semiconductor components and a method of producing them are provided, in which the substrate may be composed of a crystalline, non-crystalline or amorphous material. A covering layer is deposited on the substrate and a semiconductor layer is deposited on the covering layer. The covering layer is composed of BeO or ZnO and is deposited on the substrate with a preferred orientation of the crystal axis along the C-axis. The semiconductor layer grows epitaxially on the covering layer, the preferred axis of orientation of the covering layer being used as a seed for the crystalline growth of the semiconductor layer.