| 摘要 |
<p>PURPOSE:To contrive to stablize characterstic of a power MOSFET in the high frequency region by a method wherein a pellet is connected to a disk type metal stem having favorable thermal conductivity interposing an insulator between them. CONSTITUTION:The insulator 10 consisted of a ceramic plate is fixed at the center of the disk type metal stem 1 having favorable thermal conductivity. A metal film 11 is coated on the upper face of the insulator 10, and the pellet 2 constituting the lateral type power MOSFET circuit is fixed on the metal film 11. Three pieces of leads 7 are fixed to the stem 1 penetrating the stem 1 interposing insulator between them, Because in this transistor TR9, the pellet 2 is fixed to the stem 1 through the insulator being far smaller than the stem 1, it becomes to be unnecessitated to put a mica plate being the same grade of size with the stem 1 beneath the lower face of the stem 1, and electrostatic capacitance to be generated by the insulator 10 becomes to far smaller as compared with the case of mica plate.</p> |
