发明名称 A semiconductor device with a semiconductor element soldered on a metal substrate.
摘要 <p>A semiconductor device has a sprayed metal layer (44) formed by a method such as plasma spraying on a metal substrate (41) of a material such as aluminium, and a semiconductor element (50) attached to the sprayed metal layer (44) by soldering. A sprayed insulating layer (42) may be interposed between the sprayed metal layer (43) and the metal substrate (41) for electrically insulating the element (49) from the substrate (41).</p>
申请公布号 EP0048768(A1) 申请公布日期 1982.04.07
申请号 EP19800105903 申请日期 1980.09.29
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 SEKIBA, TOSHINOBU
分类号 H01L21/58;H01L21/60;H01L23/492;(IPC1-7):01L23/48;01L21/58;01L21/60 主分类号 H01L21/58
代理机构 代理人
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