发明名称 |
A semiconductor device with a semiconductor element soldered on a metal substrate. |
摘要 |
<p>A semiconductor device has a sprayed metal layer (44) formed by a method such as plasma spraying on a metal substrate (41) of a material such as aluminium, and a semiconductor element (50) attached to the sprayed metal layer (44) by soldering. A sprayed insulating layer (42) may be interposed between the sprayed metal layer (43) and the metal substrate (41) for electrically insulating the element (49) from the substrate (41).</p> |
申请公布号 |
EP0048768(A1) |
申请公布日期 |
1982.04.07 |
申请号 |
EP19800105903 |
申请日期 |
1980.09.29 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SEKIBA, TOSHINOBU |
分类号 |
H01L21/58;H01L21/60;H01L23/492;(IPC1-7):01L23/48;01L21/58;01L21/60 |
主分类号 |
H01L21/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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