| 发明名称 |
METHOD OF FABRICATION OF DIODES |
| 摘要 |
<p>A layer of thickness xj is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x3, with x1<xj. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.</p> |
| 申请公布号 |
GB2017404(B) |
申请公布日期 |
1982.04.07 |
| 申请号 |
GB19790009547 |
申请日期 |
1979.03.19 |
| 申请人 |
COMMISSARIAT A L'ENERCIE ATOMIQUE |
发明人 |
|
| 分类号 |
H01L21/28;H01L21/425;H01L29/43;H01L31/0296;H01L31/10;H01L31/103;H01L31/12;H01L33/00;(IPC1-7):01L33/00;01L31/06 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
