Patterning process and process for production of electronic devices utilizing said patterning process.

摘要

A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula (I):
<Chemistry id="chema01" num="0001"><Image id="ia01" he="32" wi="68" file="IMGA0001.TIF" imgContent="chem" imgFormat="TIFF" inline="no" /></Chemistry>wherein R<Sub>1</Sub>'s are independently selected from alkyl (CI-6) groups and phenyl and hapophenyl groups, R<Sub>2</Sub>, R<Sub>3</Sub>, R<Sub>4</Sub> and R<Sub>5</Sub> are independently selected from hydrogen, alkoxy (CI-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.