| 摘要 |
PURPOSE:To improve photoconductive charcteristics, durability, etc., by providing an intermediate layer on a base by using a nonphotoconductive anorphous material which uses Si and N as base material and contains halogen, and by forming a photoconductive layer of an amorphous silicon material on it. CONSTITUTION:On a conductive base 101, nonphotoconductive intermediate layer 102 of an amorphous material[a-(SiXN1-X)Y:A1-Y where 0<X<1 and 0<Y<1] which uses Si and N as base material and contains halogen (A) is formed to 30- 1,000Angstrom thickness by a glow discharging method, etc. On the layer 102, a p, n or i type photoconductive layer 103 is formed by using an amorphous silicon material containing H. On the layer 103, an upper layer which uses Si as a base material and contain >1 kind of halogne and H is formed and on the upper layer, a surface coating layer are permitted to form. Thus, a photoconductive member is obtained which is superior in optical fatigue resistance, moisture resistance, etc., and high photosensitivity. |
