| 摘要 |
PURPOSE:To eliminate the damage to a rear electrode at the time of dry etching by a method wherein the rear electrode is formed of a high-reflectivity metal layer on a silicon amorphous layer and a fluorine etching gas-resistant metal layer on the high-reflectivity metal layer. CONSTITUTION:An SmO2 film is formed on a glass substrate 1 as a transparent electrode 2 and thereafter, a P type a-Si:H layer 3, an I-type a-Si:H layer 4 and an N-type crystallite Si layer 5 are formed in order by a glow discharge plasma method. Then, an Ag layer 6 which is a high-reflectivity metal layer and an Al layer 7 which is a metal layer capable of resisting against fluorine etching gas are formed on the layer 5 as a rear electrode. Subsequently, a dry etching using CF4/O2 is performed using the Al electrode 7 as a mask and the amorphous layer is removed. According to such a way, the damage to the rear electrode is eliminated and a high-yield and high-efficiency solar cell can be obtained. |
