发明名称 |
Method of preparing di and poly chalcogenides of group IVb, Vb, molybdenum and tungsten transition metals by low temperature precipitation from non-aqueous solution and the product obtained by said method |
摘要 |
Finely divided, high surface area, small crystallite (0.1 micron or less) di- and poly-transition metal chalcogenides are prepared by mixing in the absence of an aqueous solvent a transition metal salt with a source of chalcogen yielding a precipitate. The salt and the chalcogen source can be mixed either neat or in the presence of a nonaqueous solvent. The precipitate which results before removal of the anion salt is a finely divided product.
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申请公布号 |
US4323480(A) |
申请公布日期 |
1982.04.06 |
申请号 |
US19800151450 |
申请日期 |
1980.05.19 |
申请人 |
EXXON RESEARCH & ENGINEERING CO. |
发明人 |
DINES, MARTIN B.;CHIANELLI, RUSSELL R. |
分类号 |
C01B19/00;C01G1/12;C01G23/00;C01G31/00;H01M4/58;H01M6/16;(IPC1-7):B01J27/02;H01B1/06;C01B17/00 |
主分类号 |
C01B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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