| 摘要 |
An integrated injection logic device is formed in a pocket of semiconductor material surrounded by oxide isolation, and separated from a substrate by an intervening region of opposite conductivity. The steps for forming the integrated injection logic device include depositing a first material which includes a first conductivity type impurity over a first portion of the epitaxial layer, treating the first material to cause at least some of the first conductivity type impurity to enter the epitaxial layer, and introducing an opposite conductivity type impurity into a second portion of the epitaxial layer. Typically, the first material is polycrystalline silicon doped with p conductivity type impurity.
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