| 摘要 |
PURPOSE:To enable the decrease in the size of an integrated circuit and to enable the increase in the density of the integrated circuit by forming a polysilicon layer on an oxidized film formed on a substrate, forming an oxidized film on the surface as an interelement isolating region, thereby reducing the field film of an MOSIC and preventing the disconnection of an upper layer wire. CONSTITUTION:After an oxidized film 3 (1,500Angstrom and a polysilicon 4 (2,000Angstrom ) are laminated on an IC substrate 1 forming many FETs, an element forming region is opened with a hole. Then, a gate structure having a gate oxidized film and a polysilicon 6a (5,000Angstrom ) is formed, and diffused layers 7, 8 are formed in the source and drain regions. Subsequently, an oxidized film 9 is formed on the overall surface, a contacting hole is opened, and an aluminum wire 12 is connected. In this manner, the polysilicon layer 4 buried in the films 3, 5 is formed, thereby reducing the thickness of the field unit and preventing the disconnection of the wire. Since the positioning can be facilitated accurately, the increase in the density can be improved. |
