| 摘要 |
PURPOSE:To form a clustery silicon compound on a prescribed surface by chemically activating, decomposing or reacting a gaseous silicide such as polysilane with induced energy. CONSTITUTION:Silane is diluted with an inert gas such as He and pressurized in a cylinder to form associated silane or silane in an association state. Considering the silane concn. to be N% and the internal pressure of the cylinder to be Pkg/cm<2>, equation NXP>=300%kg/cm<2> is satisfied. To the silane is further added 100ppm- 5mol% tri- or pentavalent impurity such as diborane, phosphine or arsine. The gaseous mixture is activated, decomposed or reacted with about 0.1-10GHg induced energy in a reaction tube and heated from room temp. to about 700 deg.C. The pressure of the reaction system is regulated to 0.05-5 Torr. Thus, a film having a structure in which clusters are superposed is formed a prescribed surface. |
