| 摘要 |
PURPOSE:To avoid an increase of the coercive force of a permalloy pattern, by putting an intermediate layer made of a metal that is easily oxidized between an insulated layer of a magnetic bubble memory element and a permalloy thin film when the heat-resistant resin is used to an insulated layer of the magnetic bubble memory element. CONSTITUTION:A magnetic thin film 12 is formed on a nonmagnetic substrate 11, and a conductor pattern 14 is formed on the film 12 via an insulated layer 13. Furthermore another insulated layer 15 is formed with the heat-resistant resin, and a permalloy pattern 17. In this case, an intermediate layer 16 is formed with a metal such as Al, Ta, etc. that is easily oxidized between the resin 15 and the pattern 17. As a result, the diffusion of carbon that shifts from the layer 15 to the pattern 17 can be prevented by the layer 16. |
