| 发明名称 |
WERKWIJZE VOOR HET MAKEN VAN AMORFE GERMANIUMLEGERINGEN, ALSMEDE DAARUIT VERVAARDIGDE INRICHTINGEN. |
| 摘要 |
<p>A semiconductor material comprises amorphous Ge containing F (a- Ge: F). The material may also contain H, and may contain a bandgap adjusting element e.g. C or N. The material may be doped and may be utilised in Schottky, MIS, PIN and PN solar cells or in electrophotographic devices.</p> |
| 申请公布号 |
NL8104142(A) |
申请公布日期 |
1982.04.01 |
| 申请号 |
NL19810004142 |
申请日期 |
1981.09.07 |
| 申请人 |
ENERGY CONVERSION DEVICES, INC. TE TROY, MICHIGAN, VER.ST.V.AM. |
发明人 |
|
| 分类号 |
H01L31/18;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;H01L25/04;H01L29/16;H01L31/0376;H01L31/07;H01L31/20;(IPC1-7):23C11/02;03C1/72;01L31/06;22B41/00 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
