| 摘要 |
PURPOSE:To hold the high defect relieving capacity with a simple circuit and at the same time to increase the productivity, by carrying out the writing into the normal data storing region with an inspection given to the storage region to which the writing is carried out. CONSTITUTION:Each storage region which is defined by an address signal includes an RAM consisting of a flag storing region F and plural data storing regions D, a register REG that temporarily holds the data, a coincidence circuit DM that collates the data read out of the RAM with the data of the REG, and a circuit FG that produces a flag signal in accordance with the collation of the DM. Then the write data is held at the REG and written in the region D. This data is then read to be collated with the data of the REG. According to this collation, only the flag signal of the flag signal and the data are written into the RAM. |
