| 摘要 |
PURPOSE:To prevent the breaking of wire of the Al wiring at the stepped section for connection of the subject device by a method wherein the thickness of the Al film of a connection hole is equalized to the sum of the thickness of an oxide film and that of the Al film on a field oxide film. CONSTITUTION:An aperture 4 is formed by performing an etching on the oxide film 3 on the diffusion layer 2 using a resist mask 6, and an Al 5 is evaporated. The Al film 5 is formed in the thickness approximately same as that of the SiO2 film 3. The resist 6 is removed by dissolution, the Al 5 is remained in the hole 4 only and an Al 7 is evaporated again. Then, an etching is performed using a resist mask 8 and an Al wiring pattern is formed. According to this constitution, the SiO2 is thickly formed and the breaking of wire on the Al film at the stepped section for connection when the Al evaporation is performed, can be prevented even in the case when the pattern edge of the connecting hole has a steep slope. |
