发明名称 SENTAKUSANKAMAKUNOKEISEIHOHO
摘要 PURPOSE:To prevent the generation of the bird's beak on a selective oxide layer by a method wherein, after an oxide film pattern has been formed on a substrate, an anti-oxidation film is formed in such a manner that it is covering the end section of the oxide film and then a patterning is performed. CONSTITUTION:A thermal oxide film (600Angstrom in thickness) 6 is formed on an Si substrate 1 and after a selective etching has been performed on the prescribed region, a nitriding film 7 of approximately, 1,300Angstrom in thickness is formed on the whole surface. Then an oxidation-resistant mask is formed by performing a selective etching on the nitriding film 7. The selective etching is to be performed in such a manner that the aperture end section of the oxide film 6 is covered by the nitriding film 7. Subsequently, an oxidation treatment is performed in the atmosphere of steam of 1,000 deg.C and an oxide film 9 of approximately 6,000Angstrom in thickness is formed at the exposed part of the substrate. Through these procedures, no oxygen is feeded through the oxide film 6 of the mask F layer when a selective oxidation is performed and the selective oxide film having least lateral oxidation can be formed.
申请公布号 JPS5753961(A) 申请公布日期 1982.03.31
申请号 JP19800129778 申请日期 1980.09.16
申请人 MATSUSHITA ELECTRONICS CORP 发明人 MITSUI KENJI;OOKUMA TOORU;KANBARA GINJIRO;INOE MORIO
分类号 H01L21/76;H01L21/316;H01L21/762 主分类号 H01L21/76
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