| 摘要 |
PURPOSE:To suppress the detetrioration of a furnace core tube and to facilitate removal of unnecessary polycrystalline Si attached to an inner wall, by covering the inner wall surface of the quartz furnace core tube constituting the chemical gaseous phase growing device by a film comprising Si3N4. CONSTITUTION:The inner wall of the quartz furnace core tube 9 constituting the chemical gaseous-phase growing device by an Si3N4 film 10. The temperature of the furnace core tube 9 is made to be about 800 deg.C under the pressure reduced condition of 0.1-1Torr, and the reaction with SiC2Cl2, SiCl4, SiH4, NH3 or N2 are generated. For example, by utilizing the reaction such as 3SiH4+4NH3 Si3N4+12H2 and 3SiCl4+2N2 Si3N4+6Cl , an Si3N4 film 10 with the thickness of 2mum or more is attached to the inner wall of the furnace core 9. In this constitution, the deterioration of the furnace core 9 can be simply prevented. Since the film 10 serves as chemical buffer between polycrystalline Si and the furnace core 9, the etching removal of polycrystal attached to the inner wall can be performed simply and quickly. |
