发明名称 HANDOTAISOCHINOKAKUSANHOHO
摘要 PURPOSE:To enable uniform diffusion and reduce the cost through the increase in the number of wafers subjected to diffusion treatment, by conducting diffusion in a diffusion furnace in the state that solid diffusion sources and semiconductor wafers are arranged closely to each other. CONSTITUTION:A boat 12 is constituted by arranging four bars 121-124 made of quartz in parallel to vertexes of a reverse trapezoid respectively and by welding the bars integrally with each other by means of connecting bars 125. In this boat 12, the solid diffusion sources 8 and the semiconductor wafers 9 are arranged alternately and closely to each other. This is inserted into the diffusion furnace and diffusion is conducted. By this constitution, the unevenness of diffusion caused by the nonuniformity of a gas flow is eliminated.
申请公布号 JPS5754316(A) 申请公布日期 1982.03.31
申请号 JP19800130962 申请日期 1980.09.18
申请人 SHINNIPPON DENKI KK 发明人 YONEZAWA KEISHIRO
分类号 H01L21/225;H01L21/00;(IPC1-7):01L21/22 主分类号 H01L21/225
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