| 摘要 |
PURPOSE:To improve a yield rate by performing heat treatment under the reduced pressure in an inactive atmosphere within the same device after the plasma etching of a thin Al film, and removing harmfull chloride and the like from the surface of a substrate and the inside of the device. CONSTITUTION:A heater 7 is applied on the outer wall (or inner wall) of the device wherein the substrate 1, on which an Al film is formed and a resist pattern is provided, is etched. Chlorine series gas such as CCl4 and BCl3 is introduced, and plasma etching of the Al film is performed. Then heater is conducted, and the entire device is heated to the temperature of about 180 deg.C. A large amount of gas such as N2 which is heated to about 200 deg.C beforehand is introduced into the device and exhausted. Thus, the chloride attached to the surface of the substrate and remained in the device can be removed, and the corrosion and the like of the Al pattern can be prevented. The resist film can be additionally etched and the yield rate can be improved. |
