| 摘要 |
PURPOSE:To form a contact window to polycrystalline silicon in a self-alignment manner by using two kinds of photo-resist films in the manufacture of the silicon gate MOS type semiconductor integrated circuit. CONSTITUTION:The surface of a substrate, which has a field oxide film 14, to which a source and drain 17 are formed, which has a polycrystal silicon film pattern functioning as a connecting section 16-2 to a gate 16-1, polycrystal wiring and a metallic clectrode, and the surface thereof possesses an oxide film 18, is coated with a negative type photo-resist film 19 in a manner that is thick recessed sections and is thin to protruded sections, and exposed and developed, and openings 20 for collector windows to the source and the drain are shaped. The surface is coated with a positive type photo-resist film 21 and exposed and developed, and the openings 20 for the contact windows to the source and the drain 17 and an opening 22 for a contact window to the polycrystalline silicon are formed, and the contact windows 23, 24 are shaped through etching. |
