| 摘要 |
PURPOSE:To obtain the excellent element characteristics for the subject semiconductor device by a method wherein, after the first semiconductor layer and the second semiconductor layer, habing the prescribed film thickness, have been provided adjacently on an insulated substrate, the former is converted to an insulating film and a source and drain region is formed in the latter layer. CONSTITUTION:After an undoped Si single crystal layer 52 is grown on an SOS substrate 51, both sides of the layer 52 are removed by performing an etching utilizing an SiO2 film 53 and an Si3N4 film 54, the thickness of the thickened section is made twice as thick as the thin film section, a field oxide film having the thickness 2.5 times or more of the layer 52 before oxidation is formed by performing oxidation by heat and then a source and drain region, the end of which is reaching the field insulating film is formed by introducing impurities. Through these procedures, a P type residue layer is not generated in an intrinsic or N channel on both ends of the Si island side, and also an N type residue layer is not generated in the P channel, thereby enabling to improve the element efficiency. |
