| 摘要 |
PURPOSE:To eliminate the replacement and washing of nozzles and to improve workability in a CVD device, by providing a plurality of the nozzles supplying desired mixed gas to wafers and differentiating the kinds of doping gases which are to be introduced to the nozzles. CONSTITUTION:The desired mixed gas is introduced in the apparatus 20 wherein the wafers are placed on a hot plate 10, and blown out of the plurality of the nozzles arranged in parallel, and a CVD film is formed. The mixed gas comprises O2 gas, N2 carrier gas, N2 gas, SiH4 gas, and doping gases and is introduced to. e.g., two nozzles 11a and 11b, with the flow amount of each gas being regulated. The kinds of the doping gases are different for each nozzle. For example, the N type doping gas is used for one nozzle, and the P type doping gas is used for the other. the suppling (operating) nozzle euis replaced based on the kind of the film to be formed. In this apparatus, the working process, wherein the different types of gases must be continuously supplied, can be performed only by switching and adjusting valves. |
