| 摘要 |
PURPOSE:To prevent increase of leakage current of a mesa semiconductor device by a method wherein out of protective glass films at both faces mesa cut parts, thickness of the protective glass film at the lower face mesa cut part is made thicker than that of the upper face. CONSTITUTION:Out of both the faces mesa cut parts 5, 6 of the semiconductor element 11 fixed to a het radiating plate 2, although the junction end of a P-N junction 7 exposed at the lower face mesa cut part 6 is protected with the protective glass film 10, this protective glass film 10 is made to have nearly twofold thickness of the protective glass film 8a at the upper face mesa cut part 5. Accordingly quantity of a sealing resin 4 necessitated to fill up the gap between the mesa cut part 6 and the heat radiating plate 2 is reduced, and stress to be applied to the lower part junction 7 of the semiconductor element 11 generated by thermal expansion of this sealing resin 4 is weakened, and increase of leakage current can be reduced. |
