AGENCEMENT POUR LE DEPOT DE MATIERE SEMI-CONDUCTRICE CRISTALLINE

摘要

1332583 Coatings of silicon: silicon carbide: Group III-V compounds SIEMENS AG 26 July 1971 [30 Sept 1970] 34903/71 Heading C7F [Also in Division C1] Crystalline semi-conductor materials are deposited on the inner surface of a heated tube of the same semi-conductor material the interior of which is sealed off from the ambient atmosphere but connected to a source of a mixture of a gaseous compound of the semiconductor material and a gaseous reducing agent, the heated tube being connected to a source of said gaseous mixture. The tube may be heated by high frequency A.C., or by direct passage of a current therethrough. It may be located in air or in a container filled with a protective gas. The tube may be of silicon germanium silicon carbide, gallium arsenide, indium phosphide or indium antimonide.