| 摘要 |
PURPOSE:To control the load of an impurity into a semiconductor film by adding nitrogen as an impurity. CONSTITUTION:A compound containing a IIb group, a compound containing a VIb group and the compound of hydrocarbon containing a nitrogen element as an impurity introduced to a compound semiconductor such as amine as raw material gasses for a compound semiconductor film are induced into a reaction vessel in the vapor phase by a carrier gas (such as hydrogen gas), and a IIb-VIb compound semiconductor film is grown through a chemical vapor phase reaction. Regarding manufacture, amine is preferable as hydrocarbon including the nitrogen element as the introduced impurity, and it is desirable that an alkyl group constituting amine consists of either of a methyl, ethyl propyl, butyl or benzene group. Amine as a ring-structured molecule containing the nitrogen element can also be used besides amine having the alkyl group. Accordingly, the formation of a deep impurity level can be inhibited. |
