发明名称 |
Memory cell for a static memory and static memory comprising such a cell |
摘要 |
A memory cell for integration into a static memory includes two transistors with cross-coupled base and collector regions. The collector regions are connected to p-n junction diode load elements having at least one region of polycrystalline silicon material. The collector regions of the transistors are connected to the regions of the diodes which are of the same conductivity type as the collector regions.
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申请公布号 |
US4322821(A) |
申请公布日期 |
1982.03.30 |
申请号 |
US19790105357 |
申请日期 |
1979.12.19 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
LOHSTROH, JAN;HART, CORNELIS M. |
分类号 |
G11C11/411;H01L21/822;H01L21/8229;H01L27/04;H01L27/102;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/411 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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