| 摘要 |
PURPOSE:To absorb the surge voltage from an induction load by connecting the first avalanche diode in parallel with an induction load connected to a collector and connecting the second avalanche diode of the prescribed breakdown voltage between the collector and the base. CONSTITUTION:A transistor circuit connected with the first induction load 8 to the collector of a transistor 5 and the second induction load 10 are connected in parallel with a DC power source 1, the first avalanche diode 9 is connected to reverse polarity to the power source 1 in parallel with the first induction load 8, and the second avalanche diode 12 having the breakdown voltage lower than the reverse withstand voltage between the collector and the base is connected to between the collector and the base of the transistor 5 at the time of opening the base. In this manner, the surge voltage from the induction load can be absorbed by the avalanche diode having relatively low beakdown strength. |
