| 摘要 |
PURPOSE:To obtain a negative type resist for electron beam exposure with high resolution by using a styrene-glycidyl methacrylate copolymer having a specified styrene content and a specified mol.wt. CONSTITUTION:A negative type resist for electron beam exposure is manufactured using a glycidyl methacrylate-styrene copolymer having 5-15mol% styrene content, 5X10<4>-10X10<4>wt. average mol.wt. and <=3X10<5> maximum mol.wt. This resist has a small effect of postpolymn. by which a drawn pattern is gradually thickened when a resist is allowed to stand on a device after exposure to electron beams, and it gives a superior pattern with 1mum+ or -0.1mum accuracy of pattern line width. Accordingly, this resist is suitable for LSI. |
