| 摘要 |
PURPOSE:To obtain a photoelectric converter having excellent photoelectric conversion efficiency by forming a p-N junction, a P-I-N junction, P-I junction, N-I junction or their multiple junctions in a semiamorphous semiconductor, thereby generating photovoltaic power. CONSTITUTION:A metallic conductive layer 3 is formed on an insulating substrate 1 made of ceramic or the like, P type semiconductor region 4, an I type semiconductor region 5 and an N type semiconductor region 6 are laminated thereon, and pectinated or lattice-shaped transparent electrode 7 is ohmically contacted with the surface. In this case, unpair bond neutralizer, e.g., hydrogen, halogen or the like is introduced into the mixture of finely crystalline semiconductor and non-crystalline semiconductor to incorporate lattice strain in the finely crystalline semiconductor to use semiconductor and hence semiamorphous semiconductor as the semiconductor. The suitable size of the finely crystalline semiconductor is approx. 5- 200Angstrom . Accordingly, the semiamorphous semiconductor has high photoconductivity and a semiconductor device having excellent photielectric conversion efficiency can be obtained. |
