| 摘要 |
PURPOSE:To prevent the decrease in the punch through voltage and the variation in the threshold voltage by forming a hole at a semiconductor substrate, forming an insulating film at the periphery of the hole and a gate region and forming source and drain regions disposed on the bottom of the hole. CONSTITUTION:After impurity is diffused in an Si substrate 11 to form P<+> type source and drain region 16, with a field oxidized film 13 as a mask the substrate 11 is etched to form a hole, an oxidized film and a gate oxidized film 14 are formed at the periphery of the hole and the gate region, aluminum is then deposited on the overall surface, is patterned, thereby forming a gate electrode 15 and source and drain electrode 17. In this manner it can reduce the influence of the short channel effect, can prevent the decrease in the punch through voltage and the variation in the threshold voltage, and can improve the integration. |
