| 摘要 |
PURPOSE:To form a short channel MISFET by forming a region having a projection on the surface of a semiconductor substrate and forming a triangular layer by utilizig the stepwise difference of the corner of the projection. CONSTITUTION:An N type semiconductor layer is formed on a P type silicon single crystalline substrate 1, is patterned, and the first region 19 is formed. Then, a nitrided silicon film 4 is formed on the surface, and openings 41, 42 are formed. Then, P type silicon is covered, a photoresist mask is used to perform plasma etching vertically, and a triangular region 6 and leads 9, 25 are formed. Then, the first region 13 and the region 14 are formed by an ion injection and solid diffusion method. The triangular layer 6 is isolated via the film 4, is dynamically reinforced, and can be used as the gate of a short channel MISFET. |
