| 摘要 |
PURPOSE:To obtain a picture having a good quality, by dividing a photoconductive film of a two-storied solid image pickup element into each picture element, preventing the signal charge from diffusing in the lateral direction against an intense incident light beam, and preventing a stain phenomenon generated on the picture. CONSTITUTION:On a p type semiconductor substrate 1, an insulating oxide film 2, a diffusion layer (n<+> layer) 3, a gate oxide film 4, a gate electrode consisting of a gate wiring polysilicon film 5, a PSG 6, an Al electrode 7a and an Al wire are laminated, respectively of which an MOS type solid image pickup element is constituted. A two-storied solid image pickup element is prepared by forming a photo- conductive film 8 and a transparent electrode 9 for applying prescribed voltage to the photoconductive film 8, on said element. On the border of this photoconductive film 8, an insulating layer 11 is provided, and a picture having a good quality is projected by dividing the photoconductive film 8 into each picture element by this insulating layer 11, preventing the signal charge from diffusing in the lateral direction, and removing a stain phenomenon generated on the picture. |
