| 摘要 |
PURPOSE:To enable the accurate positioning of positioning pattern on the surface of a semiconductor layer by forming the semiconductor layer having a surface in the same height as the surface of a mesa on the outer periphery around the mesa and forming the positioning pattern for preparing the relationship between the preceding step and the following step at the desired position on the surface of the semiconductor layer. CONSTITUTION:The same conductive type epitaxially grown layer 12 as a semiconductor substrate 11 is formed on the substrate 11, a reverse conductive type diffused layer 13 is formed thereon, and the surface is protected with an oxidized protective film 14. A metallic electrode 15 is formed on a part, a groove 18 reaching the substrate 11 is so etched as to produce a mesa in the region under the electrode 15 in such a manner that the part except the groove is not etched but is retained as not etched, the surface of the part is formed in the same height as the surface of the mesa, and a positioning pattern 17 is formed on the surface of a semiconductor layer 12'. Since the height of the surface of the mesa is disposed in the same plane as the surface of the pattern in this manner, accurate positioning can be obtained. |
