| 摘要 |
PURPOSE:To obtain a lateral bipolar transistor improved in the electric characteristic by forming a low resistance base region by an ion injection method under an emitter region. CONSTITUTION:Phosphorus ions are injected on a P type silicon substrate 1 to form an N type region 10, and a collector region 5, a base region 6 and an emitter region 7 are diffused in an N type region 10. A P<+> type low resistance layer 11 is formed by an ion injection method on the bottom of the base region, and a P<+> type region 12 for connecting the base electrode to the low resistance layer 11 is formed. In this manner, it can avoid the problem of crystalline defect in a lateral transistor and can obtain the lateral transistor having excellent characteristics. |
