| 摘要 |
PURPOSE:To increase the density of an IC and to accelerate the operation speed of the same by eliminating an isolating region in the channel part of an MOSFET, reducing the occupying area of an element to become effectively the same element region and reducing the numbers of the contacting holes and of electrode wires. CONSTITUTION:A source region 5, a drain region 6, a channel region 11 and a gate electrode 7 and the like are formed in an element forming region (silicon region) 3, and a porous silicon oxide region 14 is disposed externally. Necessary number of closed regions 15 are formed in the region 3. Thus, porous silicon is converted into porous silicon oxide by an anodic oxidiation method at the desired part of the bottom surface of the region 3 of the substrate 1, and is not connected to the prorus region of the outside region 14 of the region 3. Thus, the region 3 is electrically isolated by the porous silicon oxide in the part or entire side and bottom surfaces. |
