PROCESS FOR MAKING SEMICONDUCTOR COMPONENTS WITH OPTOELECTRONIC CONVERSION PROPERTIES

摘要

The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness, a metallic contact being finally formed on each face of the wafer.