| 摘要 |
The starting point for mfg. the mask is a mono-crystalline semi-conductor sheet, brought to the correct thickness by an etching process. A heavy metal layer, e.g. gold or chromium, is deposited on the crystal surface, and is structured by a removal technique to correspond to the pattern to be projected. Alternatively, the scatter layer pattern is produced by bombarding defined areas of the crystal layer with particles. The required thickness of the scatter pattern layers lies in the region of 0.1 micro m. Finally, the semi-conducting sheet is removed, apart from a supporting frame, by means of an anisotropic selective etch. |
