| 摘要 |
PURPOSE:To form a lower layer wirings having no projected parts and to perform multilayer wirings without disconnection accident, by forming oxide films on a lower layer wirings consisting of polycrystalline Si and by covering the surface of the lower layer wirings by a separate process. CONSTITUTION:Polycrystalline si 3 is deposited on an si substrate 1 having an insulating layer 2. After forming a surface oxide film 8 by oxidizing the surface of the polycrystalline Si 3, overetching is performed by using resist films 9 as masks. Next, anisotropic etching is applied to the polycrystalline Si 3 to obtain a weir-type lower layer wirings 10. The whole surface of the lower layer wirings 10 is covered with flat oxide films 8, 11. An upper layer wirings 12 consisting of Al is formed on the lower layer wirings 10. In this way, the lower layer wirings having not sections is formed and disconnection accident can be prevented. |
