| 摘要 |
PURPOSE:To prevent the stepped disconnection of wiring and to maintain thermal treatment temperature for smoothing at a low temperature causing no influence on Al wiring and a diffusion region as well, by smoothing the level difference of the contact hole sections and the like of insulating layers in the wiring on a semiconductor substrate. CONSTITUTION:A field insulating film 3, a gate insulating film 4, and a polysilicon gate electrode 5 are formed on a semiconductor substrate 1 and in a MOS semiconductor device and the like having a source 6 and a drain 7 formed by using the films 3, 4, and electrodes 5 as masks for diffusion, a glass film composing lead oxide as a main component and having a low melting point of melting point 350-600 deg.C is formed on the surface of the device by a CVD method and the like, and contact holes are formed on the source and the drain after smoothing the surface of the device by heating flow and heating flow is again done and wiring 13 is formed by smoothing the end fringe sections of the contact holes. In multilayer interconnection, with the melting point decreased from the lower layer in order, the deformation of the insulating layer at the lower layer and stress can be prevented. |
