| 摘要 |
PURPOSE:To diffuse impurities selectively without using a mask, and to change the depth of diffusion arbitrarily by partially heating a semiconductor wafer through strong optical beams. CONSTITUTION:A quartz window 5 passing the strong optical beams is mounted to a box body 1, the strong optical beams 7 are supplied from an optical beam genera- tor 6 and an inpurity gas for doping is fed from a bomb 4. The semiconductor wafer 3 is placed on a support base 2 for the semiconductor wafer, the support base 2 is driven by means of a driving device 13 in the X-Y directions, and the strong optical beams 7 are scanned on the semiconductor wafer 3. The scanning position is measured by means of an interferometer 10, and the optical beam generator 6 and the driving device 13 are dontrolled by means of a computer 9. The strong optical beams ae irradiated partially onto the semiconductor wafer in the impurity gas by means of this apparatus, and impurities are diffused selectively into the semiconductor wafer. |
