| 摘要 |
PURPOSE:To provide source and drain regions with low-resistance and high-concentration regions connected to wirings without affecting influence on a channel section in a MOS-type transistor and the like having a short channel. CONSTITUTION:After forming a field insulating film 2, a gate insulating film 3, a gate electrode 4 and a source S, a drain D on a semiconductor substrate 1, groove are vertically formed around the field insulating film by reactive ion etching by using a resist 7 as a mask and ion implantation is applied to phosphorus which is poured at the bottoms of the grooves and high concentration regions 9 are formed. Next, phosphate silicate glass (PSG)11 is deposited to fill the grooves 8 and thin diffusion layers 12 are formed at the sides of the grooves 8 by applying thermal treatment at 1,000 deg.C. The electrode wirings connected to the source and drain form an electrode window at the PSG layer 11 and are connected to the diffusion layer 12, 9. |
