发明名称 METHOD OF FORMING ELECTRIC CONTACT
摘要 Electrical contacts to diffused regions in a semiconductor substrate are made by a process which reduces the space needed in memory or logic cell layouts. The contacts are made such that they overlap, but are insulated from, adjacent conductors. The contacts are formed in a manner which avoids shorting of the diffused junctions to adjacent structures without being limited by lithographic overlay tolerances.
申请公布号 JPS5750441(A) 申请公布日期 1982.03.24
申请号 JP19810103454 申请日期 1981.07.03
申请人 INTERN BUSINESS MACHINES CORP 发明人 ROBAATO CHIYAARUZU DOTSUKAATEI;POORU RUISU GAABARINO
分类号 H01L27/10;H01L21/28;H01L21/321;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;H01L29/78 主分类号 H01L27/10
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